Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2011-01-04
2011-01-04
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S079000, C257SE33001, C349S069000
Reexamination Certificate
active
07863614
ABSTRACT:
An LED backlight device includes a first substrate having optical transparency and having first and second surfaces. An LED thin-film layered structure is fixed to the first surface of the first substrate, and is formed of epitaxially grown inorganic material layers as a P-N junction device. An anode electrode of the LED thin-film layered structure is connected to an anode driver IC via an anode wiring. A cathode electrode of the LED thin-film layered structure is connected to a cathode driver IC via a cathode wiring. A phosphor is provided on the second surface of the first substrate. The LED backlight device further includes a second substrate having optical transparency and having first and second surfaces. The first surface of the second substrate faces the first surface of the first substrate. A reflection layer is provided on the second surface of the second substrate.
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Nakamura Yukio
Toyama Hiroshi
Monbleau Davienne
Oki Data Corporation
Rabin & Berdo P.C.
Trinh Hoa B
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