LED array with insulating films

Details LED array with insulating films LED array with insulating films

1994-10-20

1996-06-04

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

257 91, 257 99, 257639, 257644, H01L 3300

Patent

active

055235905

ABSTRACT:
An LED array, including a semiconductor substrate of a first conductive type; a first insulating film formed on the substrate, comprising aluminum oxide and having a plurality of first windows; a second insulating film formed on the first insulating film, having a plurality of second windows aligned respectively with the plurality of first windows, the plurality of second windows being formed by a photolithography process that does not etch the first insulting film; a plurality of diffusion regions of a second conductive type, formed by diffusion of an impurity of the second conductive type through the plurality of first windows into the semiconductive substrate, for creating pn junctions from which and from near which light is emitted, principally through the plurality of first windows and the plurality of second windows; and a plurality of electrodes formed on the second insulating film, extending through the plurality of first windows and the plurality of second windows, and making electrical contact with respective diffusion regions.

REFERENCES:
patent: 3730766 (1973-05-01), Nishimatsu et al.
patent: 3745428 (1973-07-01), Misawa et al.
patent: 4127792 (1978-11-01), Nakata
patent: 4145707 (1979-03-01), Sadamasa et al.
patent: 4852112 (1989-07-01), Kagawa et al.
patent: 5309001 (1994-05-01), Watanabe et al.
Nakamura et al., "Kotai Hakko Soshi to sono Oyo (Solid-State Light-Emitting Elements and their Applications)", Sampo, 1971, pp. 78-81.
Hashimoto et al., "Purazuma CVD SiOxNy Maku wo Mochiita Zn Sentaku Kakusan Gijutsu no Kaihatsu" (Development of Selective Zinc Diffusion Technology Using Plasma CVD SiOxNy Film), Oki Denki Kenkyu Kaihatsu (Oki Research and Development), vol. 52, No. 4, pp. 105-110, Oct. 1985.

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