Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2007-04-24
2007-04-24
Malsawma, Lex H. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
Reexamination Certificate
active
11119403
ABSTRACT:
The invention concerns an LED arrangement with at least one LED chip (11) comprising a radiation decoupling surface (12) through which the bulk of the electromagnetic radiation generated in the LED chip (11) is decoupled. Arranged on the radiation decoupling surface (12) is at least one phosphor layer (13) for converting the electromagnetic radiation generated in the LED chip. A housing (17) envelops portions of the LED chip (11) and the phosphor layer (13).
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Schnitzer, I. et al., “30% external quantum efficiency from surface textured, thin-film light-emitting diodes”,Appl. Phys. Lett., vol. 63, No. 16 (Oct. 18, 1993).
Brunner Herbert
Guenther Ewald Karl Michael
Strauss Jörg
Waitl Günter
Fish & Richardson P.C.
Malsawma Lex H.
Osram Opto Semiconductor GmbH
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