Chemical apparatus and process disinfecting – deodorizing – preser – Chemical reactor – Including specific material of construction
Patent
1989-09-12
1990-11-27
Straub, Gary P.
Chemical apparatus and process disinfecting, deodorizing, preser
Chemical reactor
Including specific material of construction
156605, 1566171, 1566202, 156DIG70, 156DIG115, 156DIG93, C30B 1504, C30B 2940, C30B 2948, C30B 3500
Patent
active
049734547
ABSTRACT:
If the distribution coefficient of an impurity in a compound melt is less than 1, the impurity concentration in the compound melt doped with the impurity increased during a crystal growth in an LEC method. A supplying device replenishes an undoped crystal into the melt in order to keep the impurity concentration constant. The undoped crystal is covered with a liquid encapsulant which is contained in an encapsulant-supporting-cylinder or double-cylinder. Replenishing rate (dQ/dt) of the undoped crystal and the growing rate (dS/dt) should satisfy the equation ##EQU1## The impurity concentration of a grown single crystal is uniform. Whole of the crystal is a single crystal. Electronic properties of the single crystal is uniform from seed end to tail end.
REFERENCES:
patent: 2892739 (1959-06-01), Rusler
patent: 2977258 (1961-03-01), Dunkle
patent: 3954416 (1976-05-01), Keller
patent: 4456499 (1984-06-01), Lin
patent: 4478675 (1984-10-01), Akai
patent: 4650540 (1987-03-01), Stoll
patent: 4659421 (1987-04-01), Jewett
Pamplin, Crystal Growth, 1975, pp. 552-555.
Hollan et al., "The Preparation of Gallium Arsenide", Current Topics in Materials Science, vol. 5, 1980, pp. 73-76.
Morioka Mikio
Shimizu Atsushi
Straub Gary P.
Sumitomo Electric Industries Ltd.
LandOfFree
LEC method and apparatus for growing a single crystal of compoun does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with LEC method and apparatus for growing a single crystal of compoun, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and LEC method and apparatus for growing a single crystal of compoun will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1031096