LEC method and apparatus for growing a single crystal of compoun

Chemical apparatus and process disinfecting – deodorizing – preser – Chemical reactor – Including specific material of construction

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156605, 1566171, 1566202, 156DIG70, 156DIG115, 156DIG93, C30B 1504, C30B 2940, C30B 2948, C30B 3500

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049734547

ABSTRACT:
If the distribution coefficient of an impurity in a compound melt is less than 1, the impurity concentration in the compound melt doped with the impurity increased during a crystal growth in an LEC method. A supplying device replenishes an undoped crystal into the melt in order to keep the impurity concentration constant. The undoped crystal is covered with a liquid encapsulant which is contained in an encapsulant-supporting-cylinder or double-cylinder. Replenishing rate (dQ/dt) of the undoped crystal and the growing rate (dS/dt) should satisfy the equation ##EQU1## The impurity concentration of a grown single crystal is uniform. Whole of the crystal is a single crystal. Electronic properties of the single crystal is uniform from seed end to tail end.

REFERENCES:
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patent: 2977258 (1961-03-01), Dunkle
patent: 3954416 (1976-05-01), Keller
patent: 4456499 (1984-06-01), Lin
patent: 4478675 (1984-10-01), Akai
patent: 4650540 (1987-03-01), Stoll
patent: 4659421 (1987-04-01), Jewett
Pamplin, Crystal Growth, 1975, pp. 552-555.
Hollan et al., "The Preparation of Gallium Arsenide", Current Topics in Materials Science, vol. 5, 1980, pp. 73-76.

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