Leaky low voltage thin film transistor

Details Leaky low voltage thin film transistor Leaky low voltage thin film transistor

1990-08-10

1992-04-14

James, Andrew J.

357 4, 357 41, 357 53, H01L 2701, H01L 2712, H01L 2940

Patent

active

051052466

ABSTRACT:
A leaky thin film transistor including a charge transport layer, source and drain electrodes located adjacent to the charge transport layer, a gate electrode spaced from the charge transport layer by a gate dielectric layer, the gate electrode defining a gated portion of the charge transport layer extending between the source electrode and the drain electrode, and an ungated portion of the charge transport layer extending between the source and drain electrodes and providing an electrical path for leakage current to flow between the source and drain electrodes in parallel with the gated path between the source and drain electrodes.

REFERENCES:
patent: 4963955 (1990-10-01), Hatanaka et al.

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