Leakage tracking device sample for IDDQ measurement and defect r

Details Leakage tracking device sample for IDDQ measurement and defect r Leakage tracking device sample for IDDQ measurement and defect r

1996-09-27

1999-03-30

Ballato, Josie

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

324763, G01R 3126

Patent

active

058894098

ABSTRACT:
A method for detecting defect in a semiconductor device using IDDQ testing techniques that are not dependent upon the background leakage current for defect resolution. One embodiment of the present invention uses device sampling, i.e. creates a small sample of a device that is representative of the whole device, such that the ratio of the quiescent current of the device to the quiescent current of the sample exhibits a linear relationship to the ratio of the component count of the device to the component count of the sample.

REFERENCES:
patent: 5332973 (1994-07-01), Brown et al.
patent: 5570034 (1996-10-01), Needham et al.
patent: 5670892 (1997-09-01), Sporck
David G. Edwards, Testing for MOS Integrated Circuit Failure Modes, IEEE, Reprint from Proceedings International Test Conference 1980, pp. 303-312. (Month Unavailable).
Thomas M. Storey and Wojciech Maly, CMOS Bridging Fault Detection, IEEE, Reprint from Proceedings International Test Conference, 1990, pp. 325-334. (Month Unavailable).
Robert C. Atken, A Comparison of Defect Models For Fault Location with IDDQ Measurements, IEEE, Reprint from Proceedings International Test Conference 1992, pp. 335-344. (Month Unavailable).
Charles F. Hawkins and Jerry M. Soden, Electrical Characteristics and Testing Considerations For gate Oxide Shorts In CMOS ICs, IEEE, Reprint from Proceedings International Test Conference 1995, pp. 313-324. (Month Unavailable).

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