Static information storage and retrieval – Floating gate – Particular biasing
Patent
1999-08-03
2000-04-18
Tran, Andrew Q.
Static information storage and retrieval
Floating gate
Particular biasing
3651852, 36518525, 3651853, 327 52, 327 53, 327 56, G11C 1606
Patent
active
060523077
ABSTRACT:
A leakage tolerant sense circuit for use in an electrically programmable and erasable read only memory (EEPROM) is disclosed. In a reference portion of a sense cycle, the leakage tolerant sense amplifier utilizes the sum of a reference current and any leakage current to establish a reference voltage. In the subsequent sense portion of the sense cycle, the leakage tolerant sense amplifier utilizes the sum of a memory cell current and any leakage current to establish a read voltage. The read voltage is compared with the reference voltage to determine the logic stored within the memory cell.
REFERENCES:
patent: 4763305 (1988-08-01), Kuo
patent: 4811294 (1989-03-01), Kobayashi et al.
Huber Brian W.
Pekny Theodore T.
Hoel Carlton H.
Holland Robby T.
Telecky Jr. Frederick J.
Texas Instruments Incorporated
Tran Andrew Q.
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