Leakage tolerant sense amplifier

Static information storage and retrieval – Floating gate – Particular biasing

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Details

3651852, 36518525, 3651853, 327 52, 327 53, 327 56, G11C 1606

Patent

active

060523077

ABSTRACT:
A leakage tolerant sense circuit for use in an electrically programmable and erasable read only memory (EEPROM) is disclosed. In a reference portion of a sense cycle, the leakage tolerant sense amplifier utilizes the sum of a reference current and any leakage current to establish a reference voltage. In the subsequent sense portion of the sense cycle, the leakage tolerant sense amplifier utilizes the sum of a memory cell current and any leakage current to establish a read voltage. The read voltage is compared with the reference voltage to determine the logic stored within the memory cell.

REFERENCES:
patent: 4763305 (1988-08-01), Kuo
patent: 4811294 (1989-03-01), Kobayashi et al.

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