Leakage current reduction for CMOS memory circuits

Details Leakage current reduction for CMOS memory circuits Leakage current reduction for CMOS memory circuits

2006-08-15

2006-08-15

Phung, Anh (Department: 2824)

Static information storage and retrieval

Powering

C365S229000

Reexamination Certificate

active

07092307

ABSTRACT:
A CMOS integrated circuit (e.g., an SRAM or a DRAM) is partitioned into a core block, a peripheral block, and a retention block. The core block includes circuits (e.g., memory cells) that are powered on at all times and is coupled directly to power supply and circuit ground. The peripheral block includes circuits that may be powered on or off and are coupled to the power supply via a head switch and/or to circuit ground via a foot switch. The switches and the core block may be implemented with high threshold voltage (high-Vt) FET devices to reduce leakage current. The peripheral block may be implemented with low-Vt FET devices for high-speed operation. The retention block includes circuits (e.g., pull-up devices) that maintain signal lines (e.g., word lines) at a predetermined level so that the internal states of the core block are retained when the peripheral block is powered off.

REFERENCES:
patent: 4096584 (1978-06-01), Owen et al.
patent: 5070482 (1991-12-01), Miyaji
patent: 5771199 (1998-06-01), Lee
patent: 5859548 (1999-01-01), Kong
patent: 6188628 (2001-02-01), Tomotani
patent: 6426908 (2002-07-01), Hidaka
patent: 6643173 (2003-11-01), Takemura
patent: 6657911 (2003-12-01), Yamaoka et al.
patent: 6765817 (2004-07-01), Takemura
patent: 2002/0080676 (2002-06-01), Scott
patent: 2002/0100944 (2002-08-01), Ishibashi et al.

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