Patent
1973-02-21
1976-06-01
James, Andrew J.
357 52, H01L 2940
Patent
active
039613585
ABSTRACT:
Leakage currents can occur in monolithic semi-conductor integrated circuits through field induced inversion layer channels where the field arises from a layer of distributed charge on the surface of the passivating insulator. These channels can occur at locations where adjacent conductors are at substantially different potentials during circuit operation. At those locations where such channels, if present, could couple a region in the device to another region which may be at some different potential, a conductor layer is disposed on the insulating layer. This conductor layer is adapted to be biased during operation of the device in such a way that an inversion layer channel is not induced thereunder, so that a continuous channel between the two regions cannot be established. Other locations where channels are not likely to occur are left free of conductive material in order to save space.
REFERENCES:
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patent: 3491273 (1970-01-01), Stiegler
patent: 3600648 (1971-08-01), Longo
H. Camenzind et al., "IC's Breakthrough the Voltage Barrier," Electronics, Mar. 31, 1969, pp. 90-95.
Christoffersen H.
Clawson Jr. Joseph E.
James Andrew J.
RCA Corporation
Williams R. P.
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