Leakage current mitigation in a semiconductor device

Details Leakage current mitigation in a semiconductor device Leakage current mitigation in a semiconductor device

2011-03-22

2011-03-22

Donovan, Lincoln (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

C327S543000, C327S546000, C326S033000, C326S034000, C324S522000, C324S763010, C324S762010

Reexamination Certificate

active

07911263

ABSTRACT:
A dormant mode target semiconductor device within a leakage current target unit is identified for mitigating leakage current to prevent it from reaching catastrophic runaway. A leakage current shift monitor unit is electrically connected to the output node of the leakage current target unit and collects leakage current from the selected target semiconductor device for two consecutive predefined temporal periods and measures the difference between the collected leakage currents. A comparator receives and compares the outputs of the current shift monitor unit and a reference voltage generator. The comparator propagates an alert signal to the leakage current target unit when the leakage voltage output from the leakage current shift monitor unit exceeds the reference voltage, a condition that indicates that the leakage current is about to approach catastrophic runaway levels. This alert signal switches the target semiconductor device to an active mode for leakage mitigation, which includes a repair voltage from a repair voltage generator applied to the gate of the target semiconductor device.

REFERENCES:
patent: 5132929 (1992-07-01), Ochii
patent: RE34797 (1994-11-01), Sato et al.
patent: 5936902 (1999-08-01), Hsu et al.
patent: 6693448 (2004-02-01), Okada et al.
patent: 7035131 (2006-04-01), Huang et al.
patent: 7196571 (2007-03-01), Sumita
patent: 7235997 (2007-06-01), Huang
patent: 7446549 (2008-11-01), Tomita et al.
patent: 7564274 (2009-07-01), Hughes
patent: 2006/0091936 (2006-05-01), Ikenaga et al.
patent: 2007/0145981 (2007-06-01), Tomita et al.
patent: 2007173493 (2007-07-01), None

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