Leakage current compensating circuit for semiconductor image sen

Facsimile and static presentation processing – Facsimile – Recording apparatus

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H04N 534

Patent

active

041942205

ABSTRACT:
A dark current compensation system for use with a semiconductor imaging device. A p-n junction, thermally connected to the semiconductor imaging device, is forward biased by a temperature variant voltage. The bias voltage is varied in accordance with the temperature of the junction such that the current through the forward biased junction is substantially equal to the reverse saturation current of the junction times a predetermined constant. A dark current compensation signal is derived from the current through the junction.

REFERENCES:
patent: 3814849 (1974-06-01), Bucher et al.
patent: 3839669 (1974-10-01), Infante et al.

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