Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame
Reexamination Certificate
2007-12-18
2007-12-18
Potter, Roy Karl (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Lead frame
C257S337000
Reexamination Certificate
active
11273467
ABSTRACT:
A semiconductor device has a leadframe with a structure made of a base metal (105), wherein the structure consists of a chip mount pad (402) and a plurality of lead segments (403). Covering the base metal are, consecutively, a nickel layer (301) on the base metal, and a continuous layer of noble metal, which consists of a gold layer (201) on the nickel layer, and an outermost palladium layer (202) on the gold layer. A semiconductor chip (410) is attached to the chip mount pad and conductive connections (412) span from the chip to the lead segments. Polymeric encapsulation compound (420) covers the chip, the connections, and portions of the lead segments. In QFN devices with straight sides (501), the compound forms a surface (421) coplanar with the outermost palladium layer (202) on the un-encapsulated leadframe surfaces.
REFERENCES:
patent: 5360991 (1994-11-01), Abys et al.
patent: 5510197 (1996-04-01), Takahashi et al.
patent: 5801436 (1998-09-01), Serizawa
patent: 5994767 (1999-11-01), Huang et al.
Brady III Wade James
Potter Roy Karl
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Tung Yingsheng
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