Lead titanate isolation layers for use in fabricating PZT-based

Details Lead titanate isolation layers for use in fabricating PZT-based Lead titanate isolation layers for use in fabricating PZT-based

1997-11-25

2000-06-13

Bowers, Charles

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

438240, H01L 2994, H01L 21314

Patent

active

060748850

ABSTRACT:
A method for constructing a device having a bottom electrode in contact with a layer of a ferroelectric dielectric material. In the method of the present invention, a layer of a field ferroelectric material is deposited on a substrate and etched to form a trench in which the bottom electrode is constructed. The bottom electrode is then deposited and a layer of the ferroelectric dielectric material is deposited over the bottom electrode and at least a portion of the field ferroelectric material. The ferroelectric layers are deposited in a perovskite state. These layers are etched back to the substrate in those areas that are outside of the device.

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