Lead-strontium-chalcogenide diode laser

Details Lead-strontium-chalcogenide diode laser Lead-strontium-chalcogenide diode laser

1986-08-11

1988-01-26

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 45, 357 16, 357 17, 357 61, H01S 319

Patent

active

047220872

ABSTRACT:
A double heterojunction lead salt infrared diode laser having an active region layer of a lead salt semiconductor of a given lattice constant, energy band gap, and index of refraction. The active region layer is sandwiched between two lead salt semiconductor layers containing strontium and selenium that are mutually of opposite conductivity type and have substantially the same lattice constant as the active region layer. In addition, the two outside layers have an energy band gap greater than the active region layer and an index of refraction less than the active region layer. The resulting laser has lattice matching, as well as enhanced carrier confinement and optical confinement.

REFERENCES:
patent: 4608694 (1986-08-01), Partin
patent: 4612644 (1986-09-01), Partin
D. L. Partin; "Lead-Europium-Selenide-Telluride Grown by Molecular Beam Epitaxy"; Journal of Electronic, vol. 13, No. 3, pp. 493-504, May 1984.

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