Lead silicate based capacitor structures

Details Lead silicate based capacitor structures Lead silicate based capacitor structures

1995-04-28

2000-07-11

Picard, Leo P.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

3613211, 3613212, 3613213, 361312, 361311, H01G 410

Patent

active

060882166

ABSTRACT:
A capacitor and method of making is described incorporating a semiconductor substrate, a bottom electrode formed on or in the substrate, a dielectric layer of barium or lead silicate, and a top electrode. A sandwich dielectric of a barium or lead silicate and a high dielectric constant material such as barium or lead titanate may form the dielectric. The silicate layer may be formed by evaporating and diffusing, ion implanting, or electroplating and diffusing barium or lead. The high epsilon dielectric constant material may be formed by sol gel deposition, metal organic chemical vapor deposition or sputtering. The invention overcomes the problem of a bottom electrode and dielectric layer which chemically interact to form a silicon oxide layer in series or below the desired dielectric layer.

REFERENCES:
patent: 3798516 (1974-03-01), Short
patent: 3977887 (1976-08-01), McIntosh
patent: 5258886 (1993-11-01), Murayama et al.
patent: 5471364 (1995-11-01), Summerfelt et al.

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