Lead materials for semiconductor devices

Details Lead materials for semiconductor devices Lead materials for semiconductor devices

1985-04-03

1986-05-27

Rutledge, L. Dewayne

Alloys or metallic compositions

Copper base

Zinc containing

420485, 420487, 420494, 420500, C22C 906

Patent

active

045914842

ABSTRACT:
A lead material for semiconductor devices comprising from 0.4 to 4.0 wt % of Ni, from 0.1 to 1.0 wt % of Si, from 0.05 to 1.0 wt % of Zn, from 0.01 to 1.0 wt % of Mn, from 0.001 to less than 0.01 wt % of Mg, from 0.001 to less than 0.01 wt % of Cr, up to 0.003 wt % of S, and the balance of Cu and inevitable impurities. The material may further comprise up to 5 ppm of hydrogen and up to 5 ppm of oxygen.

REFERENCES:
patent: 4198248 (1980-04-01), Mandigo et al.
patent: 4337089 (1982-06-01), Arita et al.
patent: 4366117 (1982-12-01), Tsuji
patent: 4430298 (1984-02-01), Miyafuji et al.

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