Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2006-03-14
2006-03-14
Potter, Roy (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S772000
Reexamination Certificate
active
07012333
ABSTRACT:
The present invention relates to a lead-free bump with suppressed formation of voids, obtained by reflowing a plated film of Sn—Ag solder alloy having an adjusted Ag content, and a method of forming the lead-free bump. The lead-free bump of the present invention is obtained by forming an Sn—Ag alloy film having a lower Ag content than that of an Sn—Ag eutectic composition by plating and reflowing the plated alloy film.
REFERENCES:
patent: 6228322 (2001-05-01), Takeda et al.
patent: 2003/0030149 (2003-02-01), Miura et al.
Kiumi Rei
Kuriyama Fumio
Saito Nobutoshi
Shimoyama Masashi
Yokota Hiroshi
Ebara Corporation
Potter Roy
Wenderoth , Lind & Ponack, L.L.P.
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