Lead frames for trench drams

Details Lead frames for trench drams Lead frames for trench drams

1996-01-24

1998-12-01

Niebling, John

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Metallic housing or support

257676, H01L 2160

Patent

active

058438092

ABSTRACT:
A DIP integrated circuit package is disclosed which includes a trench-type DRAM and an associated non-symmetric lead frame having one or more Y-shaped leads which branch in the direction of die I/O pads. Such non-symmetric lead frames allow multiple use of pin spacing (i.e., one pin may be used to connect to widely spaced I/O pads on the DRAM die). Further, such structures serve to dissipate the generated heat, and thereby reduce noise, in high density trench-type DRAMs, such as 64 Mbit DRAMs. The lead frame is provided as a DIP lead frame which has no die attach pad and is wire bonded to I/O pads of the integrated circuit that are provided along a center line on the chip.

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"Hitachi HM51W64800J7 64 MBit DRAM", Integrated Circuit Engineering Corporation, Report No. SUB 9407-04, pp. 1-12, Jul. 1994.

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