Lead frame material formed of copper alloy for resin sealed type

Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame

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Details

257741, 420469, H01L 2348, H01L 2944, H01L 2952, H01L 2960

Patent

active

054632471

ABSTRACT:
There is provided a lead frame material formed of a Cu alloy for a resin sealed type semiconductor device, wherein the Cu alloy consists essentially of 2 to 4% Ni, more than 0.5 to 1%, Si, 0.1 to 2% Zn, more than 0.01 to 0.05%, Mg, 0.05 to 1% Sn, and the balance of Cu and inevitable impurities, the inevitable impurities containing 20 ppm or less sulfur (S) and 20 ppm or less carbon (C). The lead frame material formed of the Cu alloy has improved adhesion strength to an epoxy resin as a sealing material. A semiconductor device prepared from said lead frame material is also provided.

REFERENCES:
patent: 4337089 (1982-06-01), Arita et al.
patent: 4612167 (1986-09-01), Watanabe et al.
patent: 4668471 (1987-05-01), Futatsuka et al.
patent: 4732733 (1988-03-01), Sakamoto et al.
patent: 4822560 (1989-04-01), Oyama et al.
patent: 5015803 (1991-05-01), Mahulikar et al.

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