Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame
Reexamination Certificate
2006-09-05
2006-09-05
Potter, Roy (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Lead frame
C257S672000
Reexamination Certificate
active
07102210
ABSTRACT:
In order to mount a semiconductor element of a small electrode pitch, an inner lead portion of a lead frame is made thin and narrow to reduce a pitch. Even a semiconductor element in which an electrode arrangement pitch is smaller than conventionally can be mounted by flip chip bonding, the number of components such as a wire is reduced, and a possibility of wire cutting or the like caused by vibration or the like during semiconductor device assembling is reduced. A fine inner lead formation scheduled area of a conductor plate is half-etched to make a plate thickness smaller than that in a peripheral area. Then, the fine inner lead formation scheduled area is patterned to form a fine inner lead portion22. Especially, a width of a tip22aof the fine inner lead portion22is set smaller than those of a middle inner lead portion23and an outer lead portion25.
REFERENCES:
patent: 4711700 (1987-12-01), Cusack
patent: 5025114 (1991-06-01), Braden
patent: 48-15474 (1973-02-01), None
patent: 7-30051 (1995-01-01), None
patent: 10-135401 (1998-05-01), None
Oki Electric Industry Co. Ltd.
Potter Roy
Wenderoth , Lind & Ponack, L.L.P.
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