Lead frame for semiconductor device and process for producing th

Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame – Of specified material other than copper

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257736, 257766, 257666, 438123, H01L 2348, H01L 2352, H01L 2940

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active

058014365

ABSTRACT:
The present invention relates to a lead frame for the formation of a frame structure of an integrated circuit, more particularly, to a lead frame, having a structure possessing excellent bondability, solder wettability, and Ag paste adhesion. A lead frame for a semiconductor device comprises a lead frame material; a Pd plating or a Pd alloy plating, provided on the lead frame material; and a layer as an uppermost layer formed of a Pd oxide and gold or silver. A process for producing a lead frame for a semiconductor device comprises the steps of: plating a lead frame material with Pd or a Pd alloy; flasing the surface of the Pd or Pd alloy plating with gold (Au); and heat-treating the plated lead frame material in the air to provide a thin Pd oxide layer in only a Pd portion on the surface of a diffusion layer formed of Pd and Au.

REFERENCES:
patent: 3803708 (1974-04-01), Wada et al.
patent: 3818118 (1974-06-01), Bennett et al.
patent: 3933684 (1976-01-01), Petrow et al.
patent: 4410867 (1983-10-01), Arcidiacono et al.
patent: 4529667 (1985-07-01), Shiga et al.
patent: 5552031 (1996-09-01), Moon

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