Lead frame for semiconductor device

Details Lead frame for semiconductor device Lead frame for semiconductor device

1996-09-20

1997-11-04

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Lead frame

Of specified material other than copper

257666, 428620, 428628, H01L 23495

Patent

active

056843291

ABSTRACT:
The present invention relates to a lead frame for the formation of a frame structure of an integrated circuit, more particularly, to a lead frame, for a semiconductor device, having a structure possessing excellent bondability, solder wettability, and Ag paste adhesion. A lead frame for a semiconductor device comprises a lead frame substrate; a first intermediate layer, of a Ni plating or a Ni alloy plating, provided on the lead frame substrate; a second intermediate layer, of a Ag plating or a Ag alloy plating, provided on the first intermediate layer; and an outermost layer, of a Pd plating or a Pd alloy plating, provided on the second intermediate layer, wherein the Ag alloy constituting the second intermediat layer is at least one alloy selected from Ag-Co, Ag-Fe, Ag-Pd, Ag-Au, and Ag-Pt.

REFERENCES:
patent: 4929516 (1990-05-01), Pryor et al.
patent: 4996116 (1991-02-01), Webster et al.
patent: 5463247 (1995-10-01), Futatsuka et al.
patent: 5510197 (1996-04-01), Takahashi et al.

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