Lead frame for semiconductor device

Details Lead frame for semiconductor device Lead frame for semiconductor device

2005-04-19

2008-08-05

Wilczewski, M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Lead frame

Of specified material other than copper

C257S666000, C438S123000

Reexamination Certificate

active

07408248

ABSTRACT:
A lead frame for semiconductor device is provided with an inner lead part and an outer lead part. A composite plating layer is provided on the entire plane of a base material constituting the lead frame or at least on the outer lead part. The composite plating layer includes a base layer composed of an Ni-based plating layer formed on the entire plane of the base material constituting the lead frame or at least on the outer lead part, a Pd or Pd alloy plating layer formed on an upper plane of the base layer with a thickness of 0.005-0.01 μm, and an Au plating layer formed on an upper plane of the Pd or Pd alloy plating layer with a thickness of 0.02-0.1 μm. The lead frame for semiconductor device has a Pd-PPF structure. In the case of mounting a semiconductor device on a board and the like with a lead-free Sn—Zn based solder or other lead-free solders by using the lead frame, wettability of the lead frame with the lead-free Sn—Zn based solder or other lead-free solders is improved and mountability of the semiconductor device can be improved.

REFERENCES:
patent: 5684329 (1997-11-01), Serizawa
patent: 2002/0047186 (2002-04-01), Tellkamp
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patent: 10084065 (1998-03-01), None
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patent: 2001-110971 (2001-04-01), None
patent: 2002-76229 (2002-03-01), None

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