Lead frame for a semiconductor device

Electricity: electrical systems and devices – Miscellaneous

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357 70, H05K 502

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active

048947520

ABSTRACT:
A lead frame for a semiconductor device includes a metal strip made of copper or copper alloy having a plurality of wire bonding areas to which metal wires are directly connected by a direct bonding method. The wire bonding areas are electroplated with a thin silver film or a palladium film, so that formation of a copper oxidized film on the wire bonding area is substantially prevented.

REFERENCES:
patent: 3860835 (1975-01-01), Brymer et al.
patent: 4182781 (1980-01-01), Hooper et al.
patent: 4628149 (1986-12-01), Dohya
V. A. Pitt et al., Thermosonic Gold Wire Bonding To Copper Conductors, May 10-12, 1982, pp. 81-86, IEEE, 1982 Proc. 32nd Electronic Components COnf., San Diego, Calif.
K. Atsumi et al., Ball Bonding Technique For Copper Wire, pp. 312-317, 1986 IEEE.
L. Levin et al., Copper Ball Bonding, Aug. 1986, pp. 126-129, Semiconductor International.
G. McGill et al., Aluminum Wire As A Viable Alternative To Gold For Ball Bonding, Aug. 1983, pp. 92-95, Semiconductor International.
J. F. Graves et al., Reliability Effects of Fluorine Contamination of Aluminum Bonding Pads on Semiconductor Chips, Oct. 1983, pp. 227-231, Solid State Technology.
B. L. Gehman et al., Aluminum Wire for Thermosonic Ball Bonding in Semiconductor Devices, Oct. 1983, pp. 151-157 Solid State Technology.

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