Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame
Reexamination Certificate
2005-05-20
2009-06-02
Pham, Hoai v (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Lead frame
C257S787000, C257SE23031, C257SE23043, C257SE23052
Reexamination Certificate
active
07541664
ABSTRACT:
Provided is a lead frame having an improved wire bonding property of inner leads and an improved soldering property of outer leads and preventing defects with high producing yield, and a method of manufacturing the lead frame. The lead frame includes a plurality of inner leads formed with predetermined intervals between them; and a plurality of outer leads extended from the inner leads in length directions of the inner leads, each of which has an end portion overlapped with the inner lead and coupled thereto and the other end connected to neighboring outer lead by a supporting portion.
REFERENCES:
patent: 5437915 (1995-08-01), Nishimura et al.
patent: 5535509 (1996-07-01), Tomita et al.
patent: 5571428 (1996-11-01), Nishimura et al.
patent: 5724726 (1998-03-01), Tomita et al.
patent: 5763829 (1998-06-01), Tomita et al.
patent: 6518508 (2003-02-01), Park et al.
patent: 2002/0053721 (2002-05-01), Kubara et al.
patent: 5-190720 (1993-07-01), None
patent: 5-343445 (1993-12-01), None
Choi Woo-suk
Kim Eun-hee
Kim Jung-Do
Lee Soo-bong
Park & Associates IP Law LLC
Pham Hoai v
Samsung Techwin Co. Ltd.
LandOfFree
Lead frame and semiconductor device having the lead frame does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Lead frame and semiconductor device having the lead frame, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lead frame and semiconductor device having the lead frame will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4144072