Lead frame and method of manufacturing the same

Details Lead frame and method of manufacturing the same Lead frame and method of manufacturing the same

2007-09-11

2007-09-11

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Metallic housing or support

C428S675000, C428S620000, C428S670000, C428S672000, C428S674000, C257S677000, C257S666000, C257SE23041

Reexamination Certificate

active

10981417

ABSTRACT:
A lead frame having a structure that can discharge hydrogen adsorbed during deposition and can reduce a galvanic potential difference between plating layers and a method of manufacturing the same are provided. The method includes forming a Ni plating layer formed of Ni or a Ni alloy on a base metal layer formed of a metal, forming a Pd plating layer formed of Pd or an Pd alloy on the Ni plating layer, heat-treating the Ni plating layer and the Pd plating layer, and forming a protective plating layer on the heat-treated Pd plating layer.

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