Coherent light generators – Particular active media – Semiconductor
Patent
1986-06-30
1988-05-24
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
357 16, 357 17, 357 61, 372 45, H01S 319
Patent
active
047471085
ABSTRACT:
A double heterojunction lead salt semiconductor diode laser having an optical cavity of PbEuSeTe alloy with a quantum well having reduced Eu concentration disposed to one side of the optical cavity, the optical cavity having a given lattice constant and index of refraction. The optical cavity is sandwiched between two PbEuSeTe alloy confinement layers that are mutually of opposite conductivity type and have substantially the same lattice constant as the optical cavity. A pn junction surface in the optical cavity and preferably on or adjacent the quantum well layer injects charge carriers into the optical cavity. The larger energy band gap between the quantum well layer and its adjacent sandwiching confinement layer strongly confines charge carriers of one type from recombining in the oppositely doped adjacent sandwiching layer. This results in a decreased threshold current (I.sub.th) and a higher maximum operating temperature.
REFERENCES:
patent: 4350990 (1982-09-01), Lo
patent: 4608694 (1986-08-01), Partin
patent: 4612644 (1986-09-01), Partin
D. L. Partin, "Lead-Europium-Selenide-Telluride Grown by Molecular Beam Epitaxy," Journal of Electronic Materials, v 13, n 3 (May 1984).
Heremans Joseph P.
Partin Dale L.
Davie James W.
General Motors Corporation
Wallace Robert J.
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