Lead-doped silicon with enhanced semiconductor properties

Details Lead-doped silicon with enhanced semiconductor properties Lead-doped silicon with enhanced semiconductor properties

1980-05-21

1981-11-17

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136258, 156605, 156620, 156DIG64, 148174, 148186, 148189, 148183, 357 30, 357 63, 423349, 427 86, H01L 3100, H01L 3104, H01L 3118

Patent

active

043013236

ABSTRACT:
Silicon having semiconductor properties, adapted for use as an optoelectronic component, in particular solar cells, has its optoelectronic properties improved by adding to the silicon an agent, preferably lead, which increases the carrier life time.

REFERENCES:
patent: 3390020 (1968-06-01), Mandelkorn
patent: 3409554 (1968-11-01), Mandelkorn
patent: 3836999 (1974-09-01), Nishizawa
patent: 4249957 (1981-02-01), Koliwad et al.
D. E. Hill et al., "The Effect of Secondary Impurities on Solar Cell Performance", Conf. Record, 12th IEEE Photovoltaic Specialists Conf., (1967), pp. 112-119.

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