Lead chalcogenide semiconductor device

Details Lead chalcogenide semiconductor device Lead chalcogenide semiconductor device

1981-02-20

1983-11-01

Davie, James W.

Coherent light generators

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Semiconductor

357 17, 357 61, 357 67, H01S 319

Patent

active

044133430

ABSTRACT:
In lead chalcogenide semiconductor devices such as PbSSe diode lasers, an element which functions as the acceptor, selected from among the elements forming the relevant semiconductor body, added to gold and the combination is used as the p conductivity type region ohmic contact electrode. Stable continuous wave operation in the infrared region is provided by forming the p conductivity type region ohmic contact electrode for the PbSSe diode laser of a AuSe alloy.

REFERENCES:
patent: 4350990 (1982-09-01), Lo
Lo et al., "Contact Reliability Studies on Lead-Salt Diode Lasers", Solid-State Science and Technology, Journal of the Electrochemical Society, vol. 127, No. 6, Jun. 1980, pp. 1372 to 1375.

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