Coherent light generators – Particular active media – Semiconductor
Patent
1985-07-12
1986-09-16
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
357 16, 357 17, 357 61, 372 45, H01S 319, H01L 3300
Patent
active
046126449
ABSTRACT:
A double heterojunction lead salt infrared diode laser having an active region layer of a lead salt semiconductor of a given lattice constant, energy band gap, and index of refraction. The active region layer is sandwiched between two lead salt semiconductor layers containing calcium and one element selected from the group consisting of europium and strontium that are mutually of opposite conductivity type and have substantially the same lattice constant as the active region layer. In addition, the two outside layers have an energy band gap greater than the active region layer and an index of refraction less than the active region layer. The resulting laser has lattice matching, as well as enhanced carrier confinement and optical confinement.
REFERENCES:
Partin et al., "Wavelength coverage of Lead-Europium-Selenide-Telluride Diode Lasers", Applied Physics Letters, 45(3), Aug. 1, 1984, pp. 193-195.
Partin, "Single Quantum Well Lead-Europium-Selenide-Telluride Diode Lasers", Applied Physics Letters, 45(5), Sep. 1, 1984, pp. 487-489.
Partin, "Lead-Europium-Selenide-Telluride Grown by Molecular Beam Epitaxy", Journal of Electronics Materials, vol. 13, No. 3, 1984.
Weber et al., "Waveguide and Luminescent Properties of Thin Film Pb-Salt Injection Lasers", Journal Applied Physics, vol. 44, No. 11, Nov. 1973, pp. 4991-5000.
Davie James W.
Epps Georgia Y.
General Motors Corporation
Tung Randy W.
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