Semiconductor device manufacturing: process – Making regenerative-type switching device – Having field effect structure
Reexamination Certificate
2006-07-17
2010-11-02
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
Making regenerative-type switching device
Having field effect structure
C438S197000, C438S301000, C257SE21433
Reexamination Certificate
active
07824968
ABSTRACT:
First example embodiments comprise forming a stress layer over a MOS transistor (such as a LDMOS Tx) comprised of a channel and first, second and third junction regions. The stress layer creates a stress in the channel and the second junction region of the Tx. Second example embodiments comprises forming a MOS FET and at least a dummy gate over a substrate. The MOS is comprised of a gate, channel, source, drain and offset drain. At least one dummy gate is over the offset drain. A stress layer is formed over the MOS and the dummy gate. The stress layer and the dummy gate improve the stress in the channel and offset drain region.
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Chu Sanford
Li Yisuo
Verma Purakh Raj
Zhang Guowei
Chartered Semiconductor Manufacturing Ltd
Horizon IP Pte Ltd
Trinh Michael
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