LDMOS transistor

Details LDMOS transistor LDMOS transistor

2006-11-28

2006-11-28

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

C257S476000, C257S484000

Reexamination Certificate

active

07141860

ABSTRACT:
An LDMOS transistor has a Schottky diode inserted at the center of a doped region of the LDMOS transistor. A Typical LDMOS transistor has a drift region in the center. In this case a Schottky diode is inserted at the center of this drift region which has the effect of providing a Schottky diode connected from source to drain in the forward direction so that the drain voltage is clamped to a voltage that is lower than the PN junction threshold, thereby avoiding forward biasing the PN junction. An alternative is to insert the Schottky diode at the well in which the source is formed, which is on the periphery of the LDMOS transistor. In such case the Schottky diode is formed differently but still is connected from source to drain in the forward direction to achieve the desired voltage clamping at the drain.

REFERENCES:
patent: 5886383 (1999-03-01), Kinzer
patent: 5925910 (1999-07-01), Menegoli
patent: 6573562 (2003-06-01), Parthasarathy

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