Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With switching speed enhancement means
Reexamination Certificate
2008-01-15
2010-06-29
Lee, Calvin (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With switching speed enhancement means
C438S571000
Reexamination Certificate
active
07745846
ABSTRACT:
A semiconductor device includes a substrate having a first conductivity type and a semiconductor layer formed over the substrate and having lower and upper surfaces. A laterally diffused metal-oxide-semiconductor (LDMOS) transistor device is formed over the substrate and includes a source region of the first conductivity type and a drain extension region of the first conductivity type formed in the semiconductor layer proximate the upper surface of the semiconductor layer, and a drain contact electrically connecting the drain extension region to the substrate. A Schottky diode is formed over the substrate and includes at least one doped region of the first conductivity type formed in the semiconductor layer proximate to the upper surface, an anode contact forming a Schottky barrier with the at least one doped region, and a cathode contact laterally spaced from the anode contact and electrically connecting at least one doped region to the substrate.
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Kocon Christopher Boguslaw
Korec Jacek
Xu Shuming
Brady III Wade J.
Ciclon Semiconductor Device Corp.
Kempler William B.
Lee Calvin
Telecky , Jr. Frederick J.
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