LDMOS and CMOS integrated circuit and method of making

Details LDMOS and CMOS integrated circuit and method of making LDMOS and CMOS integrated circuit and method of making

2005-06-07

2005-06-07

Nguyen, Lamson D. (Department: 2861)

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C257S742000, C438S021000

Reexamination Certificate

active

06902258

ABSTRACT:
An integrated circuit (IC) is formed on a substrate. The IC has a first well having a first dopant concentration that includes a second conductivity low-voltage transistor. The IC also has a second well having a dopant concentration equal to the first dopant concentration that includes a first conductivity high-voltage transistor. In addition, the IC has a third well having a second dopant concentration of an opposite type than the first well that includes a first conductivity low-voltage transistor. The first conductivity low-voltage transistor and the second conductivity low-voltage transistor are created without a threshold voltage (Vt) implant.

REFERENCES:
patent: 4325180 (1982-04-01), Curran
patent: 4628341 (1986-12-01), Thomas
patent: 5041895 (1991-08-01), Contiero et al.
patent: 5047358 (1991-09-01), Kosiak et al.
patent: 5508549 (1996-04-01), Watanabe et al.
patent: 5545577 (1996-08-01), Tada
patent: 5585294 (1996-12-01), Smayling et al.
patent: 5747850 (1998-05-01), Mei
patent: 5811850 (1998-09-01), Smayling et al.
patent: 5847432 (1998-12-01), Nozaki
patent: 5852314 (1998-12-01), Depetro et al.
patent: 5917222 (1999-06-01), Smayling et al.
patent: 6017797 (2000-01-01), Furukawa
patent: 6087232 (2000-07-01), Kim et al.
patent: 6111297 (2000-08-01), Grimaldi et al.
patent: 6127213 (2000-10-01), Tung
patent: 6144069 (2000-11-01), Tung
patent: 6267479 (2001-07-01), Yamada et al.
patent: 6508530 (2003-01-01), Conta et al.
patent: 6576512 (2003-06-01), Taniguchi et al.

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