Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1998-12-14
1999-09-21
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 57, 349 38, 349 59, H01L 2904, H01L 31036, H01L 310376, H01L 3120
Patent
active
059557443
ABSTRACT:
A liquid crystal display having an increased pixel aperture ratio is disclosed along with a method of making same. An array of a-Si TFTs is deposited on a transparent substrate. Subsequently, an organic insulating layer (e.g. Benzocyclobutene) and a corresponding array of pixel electrodes are deposited over the TFT array so that the pixel electrodes overlap the display address lines thereby increasing the display's pixel aperture ratio. The low dielectric constant .di-elect cons. (e.g. about 2.7) and relatively high thickness (e.g. greater than about 1.5 .mu.m) of the insulating layer reduce the pixel electrode-address line parasitic capacitance C.sub.PL in the overlap areas thereby reducing cross-talk (or capacitive coupling) in the display. In sum, an increased pixel aperture ratio is achieved without sacrificing display performance.
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Boer Willem den
Gu Tieer
OIS Optical Imaging Systems, Inc.
Rhoa Joseph A.
Saadat Mahshid
Wilson Allan R.
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