LCD TFT having two layer region adjacent base region in which th

Details LCD TFT having two layer region adjacent base region in which th LCD TFT having two layer region adjacent base region in which th

1995-08-22

1998-01-20

Sikes, William L.

Liquid crystal cells, elements and systems

Particular excitation of liquid crystal

Electrical excitation of liquid crystal

349151, 257 59, 257 72, 257349, G02F 1136, G02F 11345, H01L 2904, H01L 2701

Patent

active

057106061

ABSTRACT:
A polycrystalline silicon active layer is provided on a transparent insulating substrate. Phosphorus is ion-implanted into the active layer, to form a pair of n-type source/drain regions with a base region interposed therebetween. In this ion-implantation, a density gradient of phosphorus is formed in the thicknesses direction of the active layer. Boron is ion-implanted into each of the source/drain regions, to be adjacent to the base region. In this ion-implantation, a density gradient of boron is formed, and the position providing a maximum density of boron is set to be deeper than the position which provides a maximum density of phosphorus. By the ion-implantation of boron, an n-type LDD portion having a high resistance and a p-type portion are formed on the upper and lower sides, respectively, adjacent to the base region within each of the source/drain regions.

REFERENCES:
patent: 4764477 (1988-08-01), Chang et al.
patent: 5412493 (1995-05-01), Kunii et al.
patent: 5530266 (1996-06-01), Yonehara et al.
patent: 5574292 (1996-11-01), Takahashi et al.

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