LCD device including a TFT for reducing leakage current

Liquid crystal cells – elements and systems – Particular excitation of liquid crystal – Electrical excitation of liquid crystal

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C349S042000, C349S044000

Reexamination Certificate

active

07460190

ABSTRACT:
An amorphous-silicon TFT (thin-film-transistor) in an LCD device has a larger channel length at both the edge portions of the channel of the TFT compared to the central portion of the channel by forming chamfers at the corners of the source and drain electrodes. The larger channel length at both the edge portions reduces the leakage current caused by the turned-around light incident onto the channel.

REFERENCES:
patent: 5563432 (1996-10-01), Miura et al.
patent: 5610737 (1997-03-01), Akiyama et al.
patent: 2 283 127 (1995-04-01), None
patent: 02-216870 (1990-08-01), None
patent: 07-122754 (1995-05-01), None
patent: 10-232409 (1998-09-01), None
patent: 2001-324725 (2001-11-01), None
patent: 2002-141512 (2002-05-01), None
patent: 2002-261423 (2002-09-01), None
patent: 2003-068755 (2003-03-01), None
patent: 2001-0005298 (2001-01-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

LCD device including a TFT for reducing leakage current does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with LCD device including a TFT for reducing leakage current, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and LCD device including a TFT for reducing leakage current will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4050800

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.