LC element manufacturing method

Details LC element manufacturing method LC element manufacturing method

1995-06-07

1998-12-08

Trinh, Michael

Fishing, trapping, and vermin destroying

437 47, 437 60, H01L 2177

Patent

active

058468455

ABSTRACT:
An LC element, semiconductor device and a manufacturing method thereof whereby a channel 22 is formed by applying a voltage to a gate electrode 10 having a predetermined shape formed on a p-Si substrate 30 via an insulation layer 26, whereby a connection is formed between a first diffusion region 12 and a second diffusion region 14 formed at separated positions near the surface of the p-Si substrate 30; both the channel 22 gate electrode 10 function as inductors, and between these a distributed constant type capacitor is formed, and possessing excellent attenuation characteristics over a wide band. This LC element and semiconductor device can be easily manufactured by using MOS manufacturing technology; in the case of manufacturing as a portion of a semiconductor substrate, component assembly work in subsequent processing can be omitted. Also these can be formed as a portion of an IC or LSI device.

REFERENCES:
patent: 3504430 (1970-04-01), Kubo
patent: 4720467 (1988-01-01), Muggli et al.
patent: 4819047 (1989-04-01), Gilfeather et al.
patent: 5136357 (1992-08-01), Hesson et al.
patent: 5227659 (1993-07-01), Hubbard
patent: 5370766 (1994-12-01), Desaigoudar et al.

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