LC element comprising a reverse biased pn junction

Details LC element comprising a reverse biased pn junction LC element comprising a reverse biased pn junction

1994-12-19

1998-01-06

Lee, Benny

Wave transmission lines and networks

Coupling networks

Frequency domain filters utilizing only lumped parameters

333185, 257531, H04H 701, H01L 2993

Patent

active

057059632

ABSTRACT:
An LC element for use with a semiconductor device features excellent attenuation characteristics. The element includes a pn junction that has a predetermined shape and which is formed near the surface of a semiconductor substrate. The predetermined shapes include a spiral shape, a meander shape, a straight shape, and a curved shape. An inductor electrode is formed on the pn junction, and the pn junction is reverse biased with a specified voltage to form a distributed capacitor having a desired capacitance. One of the p and n layers functions as an inductor. The element is easily manufactured and requires minimal assembly, and may also be integrally formed as part of an IC or LSI device.

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patent: 5492856 (1996-02-01), Ikeda et al.
Millman, Microelectronics: Digital and Analog Circuits and Systems, 1979, McGraw-Hill, p. 106.

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