Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1994-11-02
1996-03-05
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257532, 257534, 333185, H01L 2900
Patent
active
054970288
ABSTRACT:
An LC element and an semiconductor device comprising a second electrode having a predetermined shape formed in direct contact with the surface of a semiconductor substrate, and a first electrode having a predetermined shape formed interspaced by an insulation layer on the semiconductor substrate surface; and a method of manufacturing the LC element. A channel formed along the first electrode on application of a predetermined gate voltage to a control electrode connected to the first electrode and the second electrode respectively function as inductors, while a distributed constant type capacitor is also formed between these; and by using the channel as a signal transmission line, the LC element and a semiconductor device give excellent attenuation characteristics. The LC element and semiconductor device are easily manufactured, while parts assembly work in subsequent processing can be abbreviated, formation as a portion of an IC or LSI device is possible, and characteristics can also be controlled.
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"Microelectronics", pp. 142-144, by J. Millman et al., McGraw-Hill, 1988.
Ikeda Takeshi
Okamura Susumu
Hille Rolf
Tran Minhloan
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