Layouts for multiple-stage ESD protection circuits for...

Details Layouts for multiple-stage ESD protection circuits for... Layouts for multiple-stage ESD protection circuits for...

2007-05-21

2011-11-08

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

C257S355000, C257S356000, C257SE21355, C257SE21356, C438S140000, C438S141000

Reexamination Certificate

active

08053808

ABSTRACT:
A semiconductor power device supported on a semiconductor substrate includes a plurality of transistor cells each having a source and a drain with a gate to control an electric current transmitted between the source and the drain. The semiconductor further includes a source metal connected to the source region, and a gate metal configured as a metal stripe surrounding a peripheral region of the substrate connected to a gate pad wherein the gate metal and the gate pad are separated from the source metal by a metal gap. The semiconductor power device further includes an ESD protection circuit includes a plurality of doped polysilicon regions of opposite conductivity types constituting ESD diodes extending across the metal gap and connected between the gate metal and the source metal on the peripheral region of the substrate.

REFERENCES:
patent: 5397914 (1995-03-01), Suda et al.
patent: 6249023 (2001-06-01), Finney
patent: 6351363 (2002-02-01), Wang
patent: 6762461 (2004-07-01), Kawamoto
patent: 2002/0088991 (2002-07-01), Hisamoto
patent: 2004/0012052 (2004-01-01), Kawamoto
patent: 2006/0071276 (2006-04-01), Zundel et al.

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