Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-03-08
2005-03-08
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S528000, C257S536000, C326S101000
Reexamination Certificate
active
06864558
ABSTRACT:
An improved cell layout for a C3MOS circuit with inductive broadbanding positions the inductor at a distance from the active region to improve isolation and aligns the edges of the resistor, inductor, and transistor regions near the common edge of adjacent cells to decrease the length of the cell-to-cell interconnect lines.
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Green Michael M.
Momtaz Afshin D.
Broadcom Corporation
Flynn Nathan J.
Garlick Harrison & Markison LLP
Mondt Johannes
Short Shayne X.
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