Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-11-06
2007-11-06
Menz, Douglas M. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S355000, C257S360000
Reexamination Certificate
active
11364178
ABSTRACT:
A layout structure of electrostatic discharge (ESD) protection circuit cooperated with an ESD protection device includes a first electrically conductive layer and a second electrically conductive layer. The first electrically conductive layer is disposed on the ESD protection device and electrically connected to the ESD protection device. The second electrically conductive layer is disposed on the first electrically conductive layer and electrically connected to the first electrically conductive layer. A width or a projection area of the second electrically conductive layer is less than that of the first electrically conductive layer.
REFERENCES:
patent: 6489689 (2002-12-01), Nojiri
patent: 6956747 (2005-10-01), Shigyo et al.
Ho Chih-Long
Tsai Ming Lin
Birch & Stewart Kolasch & Birch, LLP
Menz Douglas M.
VIA Technologies Inc.
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