Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1999-02-08
2000-11-14
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257257, 257258, 257465, 257654, H01L 27148, H01L 29768, H01L 2980, H01L 31112, H01L 31288
Patent
active
061473723
ABSTRACT:
Device layouts are described which increase the photon current of a metal oxide semiconductor image sensor. The metal oxide semiconductor can be NMOS, PMOS, or CMOS. The key part of the photon current of the image sensors comes from the depletion region at the PN junction between the drain region and the substrate material. The layouts used significantly increase the area of this depletion region illuminated by a stream of photons. The layouts have a drain region which takes the shape of a number of parallel fingers perpendicular to the gate electrode, a number of parallel fingers parallel to the gate electrode, or a spiral. The drain regions of these layouts significantly increase the area of the drain depletion region illuminated by a stream of electrons.
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Chang Wen-Cheng
Shen Chih-Heng
Yang Hua-Yu
Ackerman Stephen B.
Fenty Jesse A
Prescott Larry J.
Saadat Mahshid
Saile George O.
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