Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1995-10-13
1997-04-15
Rosasco, S.
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
430322, 430324, G03F 900
Patent
active
056208162
ABSTRACT:
A device layer layout methodology, and method and apparatus for patterning a photosensitive layer. Device features are placed on lines running in rows and/or columns during layout. The lines and/or columns are extracted from the database to produce a layout of the phase-edge phase shifting layer. The photosensitive layer may be exposed to a mask corresponding to this layout, to produce latent image of the rows and/or lines. The photosensitive layer is also exposed to the device layer layout to expose unwanted portions of the phase-edge layer. Methods of forming a variety of device features, including contact/via openings and contact/via plugs are disclosed.
REFERENCES:
patent: 4231811 (1980-11-01), Somekh et al.
patent: 4360586 (1982-11-01), Flanders et al.
patent: 4869998 (1989-09-01), Eccles et al.
patent: 4881257 (1989-11-01), Nakagawa
patent: 4890309 (1989-12-01), Smith et al.
patent: 5045417 (1991-09-01), Okamoto
patent: 5049925 (1991-09-01), Aiton et al.
patent: 5135609 (1992-08-01), Pease et al.
patent: 5187726 (1993-02-01), White
patent: 5216257 (1993-06-01), Brueck et al.
patent: 5229255 (1993-07-01), White
patent: 5250983 (1993-10-01), Yamamura
patent: 5300377 (1994-04-01), Keum
patent: 5326659 (1994-07-01), Liu et al.
patent: 5422205 (1995-06-01), Inoue et al.
patent: 5424154 (1995-06-01), Borodovsky
patent: 5472814 (1995-12-01), Lin
Andrew R. Neureuther, "Modeling Phase Shifting Masks", Preliminary Version of BACUS Symposium Paper, Dept. of Electrical Engineering and Computer Sciences, University of California Berkeley, CA 94720, Sep., 1990 pp. 1-6 and Figures 1-13.
H. Ohtsuka, K. Abe, T. Onodera, K. Kuwahara, "Conjugate Twin-Shifter For The New Phase Shift Method To High Resolution Lithography", V-LSI R&D Center, OKI Electric Industry Co., LTD, SPIE vol. 1463 Optical/Laser Microlithography IV Oct. 1991 pp. 112-123.
Hideyuki Jinbo & Yoshio Yamashita, "0.2um or Less i-line Lithograpahy by Phase-shifting-mask Technology," Semiconductor Technology Lab., Oki Electric Industry Co., Ltd. 3 pages. Mar. 1990.
N. Hasegawa, A. Imai, T. Terasawa, T. Tanaka, F. Murai, The Japan Society of Applied Physics and Related Societies "Extended Abstracts 29p-ZC-3, Submicron Lithography Using Phase Mask (9): Halftone Phase Shifting Mask" Sep. 1991.
K. Nakagawa, N. Ishiwata, Y. Yanagishita, Y. Tabata. The Japan Society of Applied Physics and Related Societies "Extended Abstracts 29p-ZC-2, Phase-Shifting Photolithography Applicable to Real IC Patterns" Sep. 1991.
Lin, Burn J. "The Attenuated Phase-Shifting Mask" Solid State Technology Jan. 1992.
Intel Corporation
Rosasco S.
LandOfFree
Layout methodology, mask set, and patterning method for phase-sh does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Layout methodology, mask set, and patterning method for phase-sh, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Layout methodology, mask set, and patterning method for phase-sh will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-359687