Layout for radio frequency power transistors

Details Layout for radio frequency power transistors Layout for radio frequency power transistors

1994-08-16

1996-01-30

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With enlarged emitter area

257578, 257584, 257587, H01L 27095, H01L 2358

Patent

active

054882524

ABSTRACT:
A layout is provided for RF power transistors that reduces common lead inductance and its associated performance penalties. An RF transistor cell is rotated 90.degree. with respect to a conventional RF transistor cell so as to located bond pads nearer the edge of a silicon die, reducing bond wire length and common lead inductance and thereby improving performance at high frequencies. The placement of bond pad and distribution of different parts of the transistor layout further reduces common lead inductance.

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patent: 5010383 (1991-04-01), Wataguchi
patent: 5023189 (1991-06-01), Bartlow
patent: 5329156 (1994-07-01), Bartlow

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