Electrical resistors – With mounting or supporting means – Plural resistors
Reexamination Certificate
2006-04-18
2006-04-18
Hoang, Tu (Department: 2832)
Electrical resistors
With mounting or supporting means
Plural resistors
C338S204000
Reexamination Certificate
active
07030728
ABSTRACT:
A resistor layout and method of forming the resistor are described which achieves improved resistor characteristics, such as resistor stability and voltage coefficient of resistance. A resistor is formed from a conducting material such as doped silicon or polysilicon. The resistor has a rectangular first resistor element, a second resistor element, a third resistor element, a fourth resistor element, and a fifth resistor element. A layer of protective dielectric is then formed over the first, second, and third resistor elements leaving the fourth and fifth resistor elements exposed. The conducting material in the exposed fourth and fifth resistor elements is then changed to a silicide, such as titanium silicide or cobalt silicide, using a silicidation process. The higher conductivity silicide forms low resistance contacts between the second and fourth resistor elements and between the third and fifth resistor elements. The second and third resistor elements are wider than the first resistor element and provide a low resistance contacts to the first resistor element, which is the main resistor element. This provides low voltage coefficient of resistance thermal process stability for the resistor.
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Lin Chih-Hsien
Thei Kong-Beng
Wong Shyh-Chyi
Taiwan Semiconductor Manufacturing Co. Ltd.
Thomas Kayden Horstemeyer & Risley
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