Layers and patterns of nanowire or carbon nanotube using...

Details Layers and patterns of nanowire or carbon nanotube using... Layers and patterns of nanowire or carbon nanotube using...

2011-04-26

2011-04-26

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C257S072000, C257SE29168, C977S742000

Reexamination Certificate

active

07932110

ABSTRACT:
Disclosed are layers and patterns of nanowire or nanotube using a chemical self assembly for forming a semiconductor layer and a conductive layer of a thin film transistor by using a nanowire and/or nanotube solution and an diamine-based self-assembled monolayer (SAM) material. The Layers and patterns including layers and patterns of nanowire or nanotube using a chemical self assembly include: a substrate having a surface terminated with amine group (—NH2) by using a chemical self-assembled monolayer (SAM) material having at least one end terminated with amine group (—NH2); and a first nanowire or nanotube layer ionically coupled to the amine group (—NH2) of the surface of the substrate.

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