Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-06-26
2007-06-26
Nguyen, Tuan H. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S775000
Reexamination Certificate
active
10197877
ABSTRACT:
A layered wiring line of silver or silver alloy includes a silver or silver alloy conductor layer including silver or silver alloy; and a protective conductor layer layered on and covering the silver or silver alloy conductor layer. A method for forming the layered wiring line includes steps of: layering the silver or silver alloy conductor layer and the protective conductor layer on a substrate in turn; making the protective conductor layer in contact with a liquid etchant common to the silver or silver alloy conductor layer and the protective conductor layer by a predetermined pattern. The protective conductor layer has a thickness satisfying a relationship in that a ratio of (the protective conductor layer's thickness)/(the silver or silver alloy conductor layer's thickness) is less than that of (a solution velocity of the protective conductor layer in the liquid etchant)/(a solution velocity of the silver or silver alloy conductor layer in the liquid etchant).
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Miyaguchi Satoshi
Nagayama Kenichi
Sugimoto Akira
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Nguyen Tuan H.
Pioneer Corporation
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