Layered system with an electrically activatable layer

Details Layered system with an electrically activatable layer Layered system with an electrically activatable layer

1995-10-03

1998-11-03

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257 88, 257329, H01L 2348, H01L 2352, H01L 2940

Patent

active

058313290

DESCRIPTION:

BRIEF SUMMARY
CROSS REFERENCE TO RELATED APPLICATION

This application is a national phase of PCT/DE 94/00383 filed 2 Apr. 1994 and based, in turn, on German national application P 43 11388.5 of 7 Apr. 1993 under the International Convention.


FIELD OF THE INVENTION

The invention relates to a layered system, especially for use in the microelectronics or microtechnology fields, having an electrically activatable layer which has at least one contact electrode extending over and connected to at least a part of a layer surface of the first layer side.


BACKGROUND OF THE INVENTION

Such a layer system is known from IEEE electron device letters, volume 12, number 12, December 1991, pages 691-692. In part this deals with a layered system with a porous silicon layer having on its upper layer side a gold contact electrode extending over the layer surface and connected thereto, the gold contact electrode having a thickness of 12 nm. On the second layer side, the porous silicon layer is connected with a silicon wafer which has on its other (back) side a further gold contact in the form of a 300 nm thick layer. Upon application of a sufficient voltage or by passage of a sufficient electric current between the two electrodes, an electroluminescence can be observed in the porous silicon layer such that light emission is visible through the 12 nm thick gold layer. For improved emission, this gold contact can be structured with openings A drawback of this known layered system is, however, that the electrical activation of the porous silicon layer, because of the large-area contact electrodes both on the upper surface of this layer and on the underside of the silicon layer, allows only a large-area electrical activation in the layer.


OBJECT OF THE INVENTION

It is an object of the present invention to provide a layered system of the aforedescribed type in which the electrically-activatable layer is controllable in a laterally-limited manner.


SUMMARY OF THE INVENTION

The object of the invention is achieved with a layered system especially for use in the microelectronic or microtechnology field, with an electrically-activatable layer which has on a first layer side extending over at least a part of the layer surface, a contact electrode connected therewith. On the second layer side of the layer at least in the layer region of the first contact electrode a multiplicity of transistor functions are provided, whereby one of the ends of the respective controllable current channels (controlled by current (I)), of the respective transistor functions is connected with the layer. Thus the electrically-activatable layer has on the first layer side, a contact electrode which at least extends over a part of the layer surface. It is advantageous if this extends over an as wide as possible part of this layer up to a complete coating of this first layer side.
On the second layer side of the electrically-activatable layer the layered system of the invention is provided at least in the layer region of the first contact electrode, with a plurality of transistor functions, preferably a multiplicity of transistor functions. One of the ends of the respective controllable-current-feeding current channels is then connected with the electrically-activatable layer. These features enable lateral limiting of the current carriers on the second layer side, namely, in the region of the respective current channel up to the electrically-activatable layer so that the laterally-limited layer region included between the contact electrode on the first layer side and the respective contact location of the individual current channel can be electrically activated. Through a multiplicity of transistor functions on the second layer side, a pattern of many laterally-limited layer regions each controllably-defined by means of the control electrodes of the transistor functions (source S, drain D, gate G) are enabled.
In particular, the electrical activation generates an electroluminescence in the electrically-activatable layer. It is, however, possible alternatively by elec

REFERENCES:
patent: 3388255 (1968-06-01), May
patent: 4529997 (1985-07-01), Jay et al.
patent: 5332681 (1994-07-01), Tonucci et al.
Submicrometer Silicon Permeable Base Transistors With Buried COSI.sub.2 Gates, by Schuppen et al., published in Electronic Letters 21 Jan. 1993 vol. 29, No. 2, pp. 215-217.

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